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MTB060P06I3 Datasheet P-channel Enhancement Mode Power MOSFET

Manufacturer: CYStech

Overview: CYStech Electronics Corp. Spec. No. : C796I3 Issued Date : 2019.03.25 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTB060P06I3 BVDSS -60V ID@ VGS=-10V, TC=25C -16.7A RDSON@VGS=-10V, ID=-8A 57mΩ(typ.

Datasheet Details

Part number MTB060P06I3
Manufacturer CYStech
File Size 583.99 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet MTB060P06I3-CYStech.pdf

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating & Halogen-free package RDSON@VGS=-4.5V, ID=-6A 63 mΩ(typ. ) Equivalent Circuit MTB060P06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB060P06I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA:.

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