MTB060P15H8 Description
CYStech Electronics Corp. 2014.10.30 Revised Date : 1/10 P-Channel Enhancement Mode Power MOSFET MTB060P15H8 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C.
MTB060P15H8 Key Features
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Pb-free lead plating and Halogen-free package
- 150V -23A -5.9A 56mΩ 60mΩ