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MTB060P15H8 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • VGS=-10V, ID=-5.2A RDSON(TYP) VGS=-4.5V, ID=-5A.
  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package -150V -23A -5.9A 56mΩ 60mΩ Symbol MTB060P15H8 Outline Pin 1 EDFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB060P15H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G f.

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Datasheet Details

Part number MTB060P15H8
Manufacturer CYStech
File Size 626.25 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB060P15H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C960H8 Issued Date : 2014.10.30 Revised Date : 2020.02.04 Page No. : 1/10 P-Channel Enhancement Mode Power MOSFET MTB060P15H8 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C Features VGS=-10V, ID=-5.2A RDSON(TYP) VGS=-4.5V, ID=-5A  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package -150V -23A -5.