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MTE160P10L3 - P-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free Marking E160P10 YMXX Device Code Date Code Ordering Information Device MTE160P10L3-0-T3-G Package Shipping SOT-223 2500pcs / Tape & Reel 0: Product rank, zero for no rank products. T3: Packing spec, T3 : 2500pcs / tape & reel, 13” reel G: Environment friendly grade: S for RoHS compliant products, G for RoHS compliant and green compound products. Y.

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Datasheet Details

Part number MTE160P10L3
Manufacturer CYStech
File Size 360.71 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE160P10L3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Product Summary BVDSS RDS(ON) typ. @ VGS=-10V, ID=-2A ID @ VGS=-10V, TC=25°C ID @ VGS=-10V, TA=25°C SOT-223 MTE160P10L3 P-Channel Enhancement Mode Power MOSFET -100 V 190 mΩ -6 A -2 Features • Low On Resistance • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free Marking E160P10 YMXX Device Code Date Code Ordering Information Device MTE160P10L3-0-T3-G Package Shipping SOT-223 2500pcs / Tape & Reel 0: Product rank, zero for no rank products. T3: Packing spec, T3 : 2500pcs / tape & reel, 13” reel G: Environment friendly grade: S for RoHS compliant products, G for RoHS compliant and green compound products.
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