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MTN10N40E3 - N-Channel Enhancement Mode Power MOSFET

General Description

The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package.

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Datasheet Details

Part number MTN10N40E3
Manufacturer CYStech
File Size 197.51 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN10N40E3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C586E3 Issued Date : 2011.04.18 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN10N40E3 BVDSS : 400V RDS(ON) : 0.47Ω(typ.) ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Switching Mode Power Supply Symbol MTN10N40E3 Outline TO-220 G:Gate D:Drain S:Source MTN10N40E3 GDS CYStek Product Specification CYStech Electronics Corp.