MTN10N60E3 Datasheet PDF - CYStech N-Channel Enhancement Mode Power MOSFET Specs

MTN10N60E3 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

BVDSS=650V typically @ Tj=150℃.
Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package.

Datasheet Details

Part number	MTN10N60E3
Manufacturer	CYStech
File Size	608.38 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTN10N60E3 Datasheet
Additional preview pages of the MTN10N60E3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN10N60E3 BVDSS : 650V @Tj=150℃ RDS(ON) : 0.75Ω ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Published: Jun 20, 2016 |