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MTN10N65BE3 - N-Channel Enhancement Mode Power MOSFET

General Description

The MTN10N65BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package.

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Datasheet Details

Part number MTN10N65BE3
Manufacturer CYStech
File Size 463.81 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN10N65BE3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C114E3 Issued Date : 2016.03.21 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN10N65BE3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=6A 650V 10A 0.54Ω Description The MTN10N65BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.