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MTN12N60E3 - N-Channel Enhancement Mode Power MOSFET

Description

The MTN12N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • BVDSS=660V typically @ Tj=150℃.
  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package.

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Datasheet Details

Part number MTN12N60E3
Manufacturer CYStech
File Size 266.32 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN12N60E3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C743E3 Issued Date : 2009.10.08 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTN12N60E3 BVDSS :660V @Tj=150°C RDS(ON) : 0.65Ω ID : 12A Description The MTN12N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
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