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MTN2300N3 - N-Channel Enhancement Mode MOSFET

Key Features

  • VDS=20V RDS(ON)=28mΩ@VGS=4.5V, IDS=6A RDS(ON)=38mΩ@VGS=2.5V, IDS=5.2A.
  • Low on-resistance.
  • Capable of 2.5V gate drive.
  • Excellent thermal and electrical capabilities.
  • Compact and low profile SOT-23 package Equivalent Circuit MTN2300N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note.

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Datasheet Details

Part number MTN2300N3
Manufacturer CYStech
File Size 437.49 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN2300N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN2300N3 Spec. No. : C413N3 Issued Date : 2007.07.05 Revised Date : Page No. : 1/5 Features • VDS=20V RDS(ON)=28mΩ@VGS=4.5V, IDS=6A RDS(ON)=38mΩ@VGS=2.5V, IDS=5.2A • Low on-resistance • Capable of 2.