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MTN2304M3 - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package RDSON(TYP) VGS=10V, ID=5A VGS=4.5V, ID=4A 30V 6A 20mΩ 28mΩ Symbol MTN2304M3 Outline SOT-89 G：Gate S：Source D：Drain DG D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=70°C Pulsed Drain Current.

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Datasheet Details

Part number MTN2304M3
Manufacturer CYStech
File Size 239.94 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN2304M3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C737M3 Issued Date : 2012.07.26 Revised Date : 2013.08.12 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET MTN2304M3 BVDSS ID Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and halogen-free package RDSON(TYP) VGS=10V, ID=5A VGS=4.5V, ID=4A 30V 6A 20mΩ 28mΩ Symbol MTN2304M3 Outline SOT-89 G：Gate S：Source D：Drain DG D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) VDS VGS ID ID IDM Pd 30 ±20 6 4.8 20 *1 1.2 *2 Linear Derating Factor 0.
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