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MTN2328AN3 - N-Channel Enhancement Mode MOSFET

Features

  • VDS=110V RDS(ON)(typ)=135mΩ@VGS=10V, ID=1.5A.
  • Low on-resistance.
  • Low gate charge.
  • Excellent thermal and electrical capabilities.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TA=25°C RDSON(TYP) 110V 1.9A 135mΩ Equivalent Circuit MTN2328AN3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTN2328AN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel.

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Datasheet Details

Part number MTN2328AN3
Manufacturer CYStech
File Size 342.90 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN2328AN3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C583N3 Issued Date : 2015.07.10 Revised Date : 2016.05.27 Page No. : 1/ 8 110V N-Channel Enhancement Mode MOSFET MTN2328AN3 Features • VDS=110V RDS(ON)(typ)=135mΩ@VGS=10V, ID=1.5A • Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TA=25°C RDSON(TYP) 110V 1.
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