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MTE8D5N10RQ8 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Low Gate Charge.
  • Fast Switching Characteristic BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON) typ. @ VGS=10V, ID=10A 100V 31A 10A 8.1mΩ Equivalent Circuit MTE8D5N10RQ8 Outline SOP-8 Ordering Information Device MTE8D5N10RQ8-0-TF-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 4000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Pac.

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Datasheet Details

Part number MTE8D5N10RQ8
Manufacturer CYStek Electronics
File Size 498.31 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE8D5N10RQ8 Datasheet

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Full PDF Text Transcription (Reference)

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CYStek Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE8D5N10RQ8 Spec. No. : C169Q8 Issued Date : 2019.09.11 Revised Date : 2023.05.10 Page No. : 1/9 Features • Low On Resistance • Low Gate Charge • Fast Switching Characteristic BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON) typ. @ VGS=10V, ID=10A 100V 31A 10A 8.
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