NE3505M04
NE3505M04 is HETERO JUNCTION FIELD EFFECT TRANSISITOR manufactured by California Eastern Labs.
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR
L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET
Features
- Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz (Reference Only) NF=0.45dB TYP. Ga=14dB TYP. @f=5.8GHz (Reference Only)
- Flat-lead 4-pin tin-type super mini-mold(M04) package APPLICATIONS
- Satellite Radio(SDARS, DMB, etc.) antenna LNA
- 5.8GHz-band WLAN LNA
- LNA for Micro-wave munication system
ORDERING INFORMATION
PART NUMBER NE3505M04 NE3505M04-T2 Quantity 50pcs (Non reel) 3 Kpcs/reel V76 Marking Packaging Style 8 mm wide emboss taping 1pin(source), 2pin(Drain) feed hole...
