NE3505M04
Overview
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. ...
| Part | NE3505M04 |
|---|---|
| Description | HETERO JUNCTION FIELD EFFECT TRANSISITOR |
| Manufacturer | California Eastern Labs |
| Size | 335.10 KB |
Related Datasheets
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| 2SA1012 | Toshiba | TRANSISITOR |
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