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NE3505M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR

Key Features

  • - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz (Reference Only) NF=0.45dB TYP. Ga=14dB TYP. @f=5.8GHz (Reference Only) - Flat-lead 4-pin tin-type super mini-mold(M04) package.

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Datasheet Details

Part number NE3505M04
Manufacturer California Eastern Labs
File Size 335.10 KB
Description HETERO JUNCTION FIELD EFFECT TRANSISITOR
Datasheet download datasheet NE3505M04 Datasheet

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz (Reference Only) NF=0.45dB TYP. Ga=14dB TYP. @f=5.8GHz (Reference Only) - Flat-lead 4-pin tin-type super mini-mold(M04) package APPLICATIONS - Satellite Radio(SDARS, DMB, etc.) antenna LNA - 5.8GHz-band WLAN LNA - LNA for Micro-wave communication system ORDERING INFORMATION PART NUMBER NE3505M04 NE3505M04-T2 Quantity 50pcs (Non reel) 3 Kpcs/reel V76 Marking Packaging Style 8 mm wide emboss taping 1pin(source), 2pin(Drain) feed hole direction Remark To order evaluation samples, please contact your local NEC sales office.