NE66219 Overview
NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG).
NE66219 Key Features
- Suitable for high-frequency oscillation
- fT = 25 GHz technology adopted
- 3-pin ultra super minimold (19, 1608 PKG) package <R>
- Pin 3 (collector) face the perforation side of the tape Quantity 50 pcs (Non reel) Supplying Form
- 8 mm wide embossed taping