• Part: NE663M04
  • Description: NPN SILICON HIGH FREQUENCY TRANSISTOR
  • Category: Transistor
  • Manufacturer: California Eastern Labs
  • Size: 407.63 KB
Download NE663M04 Datasheet PDF
California Eastern Labs
NE663M04
FEATURES - - - - - - HIGH GAIN BANDWIDTH: f T = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 d B TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 d B at 2 GHz HIGH IP3: NF = 27 d Bm at 2 GHz HIGH MAXIMUM STABLE GAIN: 15 d B @ 2 GHz LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. M04 DESCRIPTION NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz f T wafer process. With a typical transition frequency of 19 GHz the NE663M04 is usable in applications from 100 MHz to 5 GHz. The NE663M04 provides excellent low voltage/low current performance. NEC's low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE663M04 is an ideal choice for LNA and oscillator requirements in all mobile munication systems. Data Shee . ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCE = 5 V, IE = 0...