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NE663M04 - NPN SILICON HIGH FREQUENCY TRANSISTOR

Description

NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process.

With a typical transition frequency of 19 GHz the NE663M04 is usable in applications from 100 MHz to 5 GHz.

The NE663M04 provides excellent low voltage/low current performance.

Features

  • HIGH GAIN.

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Datasheet preview – NE663M04

Datasheet Details

Part number NE663M04
Manufacturer California Eastern Labs
File Size 407.63 KB
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NE663M04 Datasheet
Additional preview pages of the NE663M04 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH IP3: NF = 27 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. M04 NE663M04 DESCRIPTION NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 19 GHz the NE663M04 is usable in applications from 100 MHz to 5 GHz. The NE663M04 provides excellent low voltage/low current performance. NEC's low profile/flat lead style "M04" package is ideal for today's portable wireless applications.
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