NE66719
FEATURES
- -
- HIGH GAIN BANDWIDTH: f T = 21 GHz LOW NOISE FIGURE: NF = 1.1 d B at 2 GHz HIGH MAXIMUM GAIN: 20 d B at f = 2 GHz
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 19
1.6±0.1 0.8±0.1
1.6±0.1
NEC's NE66719 is fabricated using NEC's UHS0 25 GHz f T wafer process. This device is ideal for oscillator or low noise amplifier applications at 2 GHz and above.
0.75±0.05
0 to 0.1
0.15 -0.05
+0.1
0.3 -0
+0.1
DESCRIPTION
+0.1 -0
PIN CONNECTIONS 1. Emitter 2. Base .3. Collector
Data Shee
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain2 at VCE = 2 V, IC = 5 m A Gain Bandwidth at VCE = 2 V, IC = 20 m A, f = 2 GHz Maximum Available Power Gain4 at VCE = 2 V, IC = 20 m A, f = 2 GHz Maximum Stable Gain5 at VCE = 2 V, IC = 20 m A, f = 2 GHz Insertion...
