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NE66719 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

Description

PIN CONNECTIONS 1.

Emitter 2.

Base DataSheet4U.com3.

Features

  • HIGH GAIN.

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Datasheet preview – NE66719

Datasheet Details

Part number NE66719
Manufacturer California Eastern Labs
File Size 303.92 KB
Description NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NE66719 Datasheet
Additional preview pages of the NE66719 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz 2 NE66719 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 19 1.6±0.1 0.8±0.1 1.6±0.1 1.0 0.2 NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT wafer process. This device is ideal for oscillator or low noise amplifier applications at 2 GHz and above. 0.5 3 1 0.75±0.05 0.6 0 to 0.1 0.15 -0.05 +0.1 0.3 -0 +0.1 DESCRIPTION 0.5 +0.1 -0 UB PIN CONNECTIONS 1. Emitter 2. Base DataSheet4U.com3.
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