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NESG3032M14 - NPN SILICON GERMANIUM RF TRANSISTOR

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Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

  • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz.
  • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz.
  • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz.
  • 4-pin lead-less minimold (M14, 1208 package).

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Datasheet Details

Part number NESG3032M14
Manufacturer California Eastern Labs
File Size 323.67 KB
Description NPN SILICON GERMANIUM RF TRANSISTOR
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NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.
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