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NESG3032M14 - NPN SILICON GERMANIUM RF TRANSISTOR

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz.
  • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz.
  • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz.
  • 4-pin lead-less minimold (M14, 1208 package).

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Datasheet Details

Part number NESG3032M14
Manufacturer California Eastern Labs
File Size 323.67 KB
Description NPN SILICON GERMANIUM RF TRANSISTOR
Datasheet download datasheet NESG3032M14 Datasheet

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NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.