NESG3032M14 Description
NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE).
NESG3032M14 Key Features
- The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GH
- Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
- SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
- 4-pin lead-less minimold (M14, 1208 package)
- 8 mm wide embossed taping
- Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape