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NX6314EH - LASER DIODE

General Description

The NX6314EH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

1.25 Gb/s FTTH P2P 3 Gb/s BTS

Key Features

  • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 5.0 mW Ith = 10 mA ηd = 0.4 W/A TC =.
  • 40 to +85°C φ 5.6 mm 6.7 mm R08DS0054EJ0100 Rev.1.00 Jan 19, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation. NX6314EH Chapter Title.

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Datasheet Details

Part number NX6314EH
Manufacturer California Eastern Labs
File Size 903.57 KB
Description LASER DIODE
Datasheet download datasheet NX6314EH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Business Partner of Renesas Electronics Corporation. Preliminary NX6314EH LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS DESCRIPTION The NX6314EH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. Data Sheet R08DS0054EJ0100 Rev.1.00 Jan 19, 2012 APPLICATIONS • 1.25 Gb/s FTTH P2P • 3 Gb/s BTS FEATURES • • • • • • • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 5.0 mW Ith = 10 mA ηd = 0.4 W/A TC = −40 to +85°C φ 5.6 mm 6.7 mm R08DS0054EJ0100 Rev.1.00 Jan 19, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation.