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A Business Partner of Renesas Electronics Corporation.
Preliminary
NX6314EH
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS DESCRIPTION
The NX6314EH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Data Sheet
R08DS0054EJ0100 Rev.1.00 Jan 19, 2012
APPLICATIONS
• 1.25 Gb/s FTTH P2P • 3 Gb/s BTS
FEATURES
• • • • • • • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 5.0 mW Ith = 10 mA ηd = 0.4 W/A TC = −40 to +85°C
φ 5.6 mm 6.7 mm
R08DS0054EJ0100 Rev.1.00 Jan 19, 2012
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A Business Partner of Renesas Electronics Corporation.
NX6314EH Datasheet
