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uPG2253T6S - RF FRONT-END

General Description

power amplifier with low-pass filter.

And this device has no RF matching parts.

This device realizes high efficiency and low harmonics by 3.0 V operation.

Key Features

  • Operating frequency.
  • Supply voltage.
  • Control voltage.
  • Circuit current.
  • Output power : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP. ) : VDD1, 2, 3 = 3.0 V TYP. : Ven = 3.0 V TYP. : IDD = 95 mA TYP. @ Pin = 0 dBm : PAE = 28% TYP. @ Pin = 0 dBm : Pout = 19 dBm TYP. @ Pin = 0 dBm.
  • High efficiency.
  • High-density surface mounting : 16-pin plastic QFN package (T6S) (3.0  3.0  0.75 mm) external parts.

📥 Download Datasheet

Datasheet Details

Part number uPG2253T6S
Manufacturer California Eastern Labs
File Size 557.49 KB
Description RF FRONT-END
Datasheet download datasheet uPG2253T6S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts. This device realizes high efficiency and low harmonics by 3.0 V operation. This device is housed in a 16-pin plastic QFN (Quad Flat Non-leaded) (T6S) package. And this package is able to high-density surface mounting by small d e d n e m n m g o i c s e e R D t No r New Fo FEATURES • Operating frequency • Supply voltage • Control voltage • Circuit current • Output power : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) : VDD1, 2, 3 = 3.0 V TYP. : Ven = 3.0 V TYP. : IDD = 95 mA TYP. @ Pin = 0 dBm : PAE = 28% TYP.