Datasheet Summary
SUPER LOW NOISE HJ FET (SPACE QUALIFIED)
Features
- VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz
Optimum Noise Figure, NFOPT (dB)
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA
4.5 4.0 3.5 3.0 NF 2.5 2.0 1.5 1.0 0.5 0 1 10 40 16 14 12 10 8 6 GA 22 20 18
- HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz
- GATE LENGTH: 0.3 µm
- GATE WIDTH: 280 µm
DESCRIPTION
The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. Its excellent low noise figure and high associated gain make it suitable for space applications. NEC's...