NE23383B
Overview
The NE23383B is a heterojunction FET that utilizes the heterojunction to create high mobility electrons. The device features mushroom shaped gate for decreased gate resistance and improved power handling capabilities.
- SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz
- HIGH ASSOCIATED GAIN: GA = 15.0 dB TYP at f = 4 GHz
- GATE LENGTH = LG = 0.3 µm
- GATE WIDTH = WG = 280 µm
- HERMETIC SEALED CERAMIC PACKAGE
- HIGH RELIABILITY
- 88 ± 0.3 2 4 0.5 ± 0.1
