Datasheet Summary
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B (SPACE QUALIFIED)
Features
- VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz
- HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz
- GATE LENGTH: 0.25 µm
- GATE WIDTH: 200 µm
- HERMETIC METAL/CERAMIC PACKAGE
Optimum Noise Figure, NFOPT (dB)
1.4 1.2 GA 1 0.8 0.6 0.4 0.2 NF 18 15
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA
24 21
12 9 6 3
DESCRIPTION
The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device Features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The...