NE24283B Description
The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons.
NE24283B Key Features
- VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz
- HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz
- GATE LENGTH: 0.25 µm
- GATE WIDTH: 200 µm
- HERMETIC METAL/CERAMIC PACKAGE