The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons.
| Part number | NE24283B |
|---|---|
| Manufacturer | California Eastern |
| File Size | 49.60 KB |
| Description | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| Datasheet |
 NE24283B Datasheet
|
|
|
| Part Number | Description | Manufacturer |
|---|---|---|
| NE24200 | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP | NEC |
| NE2001-VA20 | Near edge thermal printhead (8 dots / mm) | Rohm |
| NE2001-VA20A | Near edge thermal printhead (8 dots / mm) | Rohm |
| NE2002-VA10A | Near edge thermal printhead (8 dots / mm) | Rohm |
| NE2004-VA10A | Near edge thin film thermal printhead (8 dots / mm) | Rohm |
| Part Number | Description |
|---|---|
| NE23300 | SUPER LOW NOISE HJ FET |
| NE23383B | SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
