NE24283B
Overview
The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities.
- VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz
- HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz
- GATE LENGTH: 0.25 µm
- GATE WIDTH: 200 µm
- HERMETIC METAL/CERAMIC PACKAGE Optimum Noise Figure, NFOPT (dB)
- 4 1.2 GA 1 0.8 0.6 0.4 0.2 NF 18 15
