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ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B (SPACE QUALIFIED)
FEATURES
• VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz • GATE LENGTH: 0.25 µm • GATE WIDTH: 200 µm • HERMETIC METAL/CERAMIC PACKAGE
Optimum Noise Figure, NFOPT (dB)
1.4 1.2 GA 1 0.8 0.6 0.4 0.2 NF 18 15
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA
24 21
12 9 6 3
DESCRIPTION
The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain.
NE24283B Datasheet
