XU443
XU443 is N-Channel JFET Monolithic Dual manufactured by Calogic LLC.
FEATURES
DESCRIPTION
The U443 Series is an N-Channel Monolithic Dual JFET designed for high speed amplifier circuits. Featuring high gain ( > 6 m S typical), low leakage (< 1p A typical) and low noise this device is an excellent choice for high performance test and measurement, wideband amplifiers and VHF/UHF circuits. ORDERING INFORMATION Part Package Temperature Range -55o C to +150o C -55o C to +150o C U443-4 Hermetic M0-002AG (TO-78) XU443-4 Sorted Chips in Carriers
- High Gain
- -
- - . . . gfs > 6 m S typical
- Low Leakage
- -
- - . . IG < 1p A typical
- Low Noise
Wideband Amplifiers
- Differential
- VHF/UHF Amplifiers
- Test and Measurement
- Multi-Chip/Hybrids
APPLICATIONS
PIN CONFIGURATION
TO-78
1 2 3 4 5 6 7
SOURCE 1 DRAIN 1 GATE 1 CASE/BODY SOURCE 2 DRAIN 2 GATE 2
4 5 3 2 1
6 7
BOTTOM VIEW
C S2 G1 D2 D1 G2 S1
CJ1
U443 / U444
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25o C unless otherwise noted) Parameter/Test Condition Gate-Drain Voltage Gate-Source Voltage Gate-Gate Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Symbol VGD VGS VGG IG PD Limit -25 -25 ±50 50 367 500 3 4 -55 to 150 -65 to 200 300 Unit V V V m A m W m W m W/ o C m W/ o C o C o C o C
TJ Tstg TL
ELECTRICAL CHARACTERISTICS (TA = 25o C unless otherwise noted)
SYMBOL STATIC V(BR)GSS VGS(OFF ) IDSS IGSS Gate-Source Breakdown Voltage Gate-Source Cut off Voltage Saturation Drain Current Gate Reverse Current
CHARACTERISTCS
TYP1
U443 MIN MAX
U444 MIN MAX
UNIT
TEST CONDITIONS
-35 -3.5 15 -1 -2
-25 -1 6 -6 30...