SST5912
SST5912 is N-Channel JFET Monolithic Dual manufactured by Calogic.
- Part of the SST5911 comparator family.
- Part of the SST5911 comparator family.
Features
DESCRIPTION The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain (typically > 6000 µmhos), low leakage ( < 1p A typically) and low noise, The SST5912 is an excellent choice for differential wideband amplifiers, VHF/UHF amplifiers and test and measurement. ORDERING INFORMATION Part Package Temperature Range -55o C to +150o C SST5912 Plastic SO-8 Package
- High Gain
- -
- -
- - gfs > 6 m S
- Low Leakage
- -
- - . . IG < 1p A typical Noise
- Low
- Surface Mount Package
- Differential Wideband Amplifier
- VHF/UHF Amplifiers
- Test and Measurement
APPLICATIONS
NOTE: For Sorted Chips in Carriers, See 2N5911 Series
PIN CONFIGURATION
SO-8
TOP VIEW (1) S1 (2) D1 (3) G1 (4) N/C N/C (8) G2 (7) D2 (6) S2 (5)
CJ1
PRODUCT MARKING SST5912 SST5912
ABSOLUTE MAXIMUM RATINGS (TA = 25o C unless otherwise noted) Parameter/Test Condition Gate-Drain Voltage Gate-Source Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Symbol VGD VGS IG PD Limit -25 -25 50 300 500 2.4 4 -55 to 150 -65 to 150 300 Unit V V m A m W m W m W/ o C m W/ o C o C o C o C
TJ Tstg TL
SST5911 / SST5912
CORPORATION
ELECTRICAL CHARACTERISTICS (TA = 25o C unless otherwise noted)
SYMBOL STATIC V(BR)GSS VGS(OFF) IDSS IGSS IG VGS VGS(F) DYNAMIC gfs gos gfs gos Ciss Crss en NF mon-Source Forward Transconductance mon-Source Output Conductance mon-Source Forward Transconductance mon-Source Output Conductance mon-Source Input Capacitance mon-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure 6 20 6 30 3.5 1 4 0.1 5 5 10 100 10 150 5 1.2 20 1 m S µS m S µS p F VDG = 10V, ID = 5m A f = 1k Hz VDG = 10V, ID = 5m A f = 100MHz VDG = 10V, ID = 5m A f = 1MHz VDG = 10V, ID = 5m A, f =...