CGD65A130S2 - GaN HEMT

Product Overview

Datasheet Details

Part number	CGD65A130S2
Manufacturer	Cambridge GaN Devices
File Size	915.70 KB
Description	GaN HEMT
Datasheet	CGD65A130S2 Datasheet
Additional preview pages of the CGD65A130S2 datasheet.

Product details

Description

The CGD65A130S2 is an enhancement mode GaN-on-silicon power transistor, exploiting the unique material properties of GaN to deliver high current, high breakdown voltage and high switching frequency for a wide range of electronics applications.

Features

650 V - 12 A e-mode GaN power switch.
ICeGaN™ gate technology for high gate threshold and broad gate voltage window compatible with gate-drivers for Si MOSFETs.
Gate drive voltage 9 V to 20 V.
Current sense function.
RDS(on) = 130 mΩ.
Suitable for very high switching frequency.
Kelvin Contact.
Small 8x8 mm2 PCB footprint.
Bottom side cooled DFN package.

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Published: Nov 30, 2024 |