CGD65A130S2
Description
The CGD65A130S2 is an enhancement mode GaN-on-silicon power transistor, exploiting the unique material properties of GaN to deliver high current, high breakdown voltage and high switching frequency for a wide range of electronics applications. The CGD65A130S2 features CGD’s ICeGaN™ gate technology enabling compatibility with virtually all gate drivers and controller chips available.
Key Features
- 650 V - 12 A e-mode GaN power switch
- ICeGaN™ gate technology for high gate threshold and broad gate voltage window compatible with gate-drivers for Si MOSFETs
- Gate drive voltage 9 V to 20 V
- Current sense function
- RDS(on) = 130 mΩ
- Suitable for very high switching frequency
- Kelvin Contact
- Small 8x8 mm2 PCB footprint
- Bottom side cooled DFN package
