Datasheet Details
| Part number | CGD65A130S2 |
|---|---|
| Manufacturer | Cambridge GaN Devices |
| File Size | 915.70 KB |
| Description | GaN HEMT |
| Datasheet |
 CGD65A130S2 Datasheet
|
|
|
General Description
The CGD65A130S2 is an enhancement mode GaN-on-silicon power transistor, exploiting the unique material properties of GaN to deliver high current, high breakdown voltage and high switching frequency for a wide range of electronics applications.
Key Features
- 650 V - 12 A e-mode GaN power switch.
- ICeGaN™ gate technology for high gate threshold and broad gate voltage window compatible with gate-drivers for Si MOSFETs.
- Gate drive voltage 9 V to 20 V.
- Current sense function.
- RDS(on) = 130 mΩ.
- Suitable for very high switching frequency.
- Kelvin Contact.
- Small 8x8 mm2 PCB footprint.
- Bottom side cooled DFN package.