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CAT22C10 - 256-Bit Nonvolatile CMOS Static RAM

General Description

The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits.

The high speed Static RAM array is bit for bit backed up by a nonvolatile E2PROM array which allows for easy transfer of data from RAM array to E2PROM (STORE) and from E2PROM to RAM (RECALL).

Key Features

  • s Single 5V Supply s Fast RAM Access Times: s Low CMOS Power Consumption:.
  • 200ns.
  • 300ns s Infinite E PROM to RAM Recall s CMOS and TTL Compatible I/O s Power Up/Down Protection s 100,000 Program/Erase Cycles (E2PROM) 2.
  • Active: 40mA Max.
  • Standby: 30 µA Max. s JEDEC Standard Pinouts:.
  • 18-pin DIP.
  • 16-pin SOIC s 10 Year Data Retention s Commercial, Industrial and Automotive Temperature Ranges.

📥 Download Datasheet

Datasheet Details

Part number CAT22C10
Manufacturer Catalyst Semiconductor
File Size 70.54 KB
Description 256-Bit Nonvolatile CMOS Static RAM
Datasheet download datasheet CAT22C10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CAT22C10 256-Bit Nonvolatile CMOS Static RAM FEATURES s Single 5V Supply s Fast RAM Access Times: s Low CMOS Power Consumption: –200ns –300ns s Infinite E PROM to RAM Recall s CMOS and TTL Compatible I/O s Power Up/Down Protection s 100,000 Program/Erase Cycles (E2PROM) 2 –Active: 40mA Max. –Standby: 30 µA Max. s JEDEC Standard Pinouts: –18-pin DIP –16-pin SOIC s 10 Year Data Retention s Commercial, Industrial and Automotive Temperature Ranges DESCRIPTION The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile E2PROM array which allows for easy transfer of data from RAM array to E2PROM (STORE) and from E2PROM to RAM (RECALL). STORE operations are completed in 10ms max.