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CAT24C02 - Serial EPROM

Download the CAT24C02 datasheet PDF. This datasheet also covers the CAT24C01 variant, as both devices belong to the same serial eprom family and are provided as variant models within a single manufacturer datasheet.

General Description

The CAT24C01/02/04/08/16 are 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb respectively CMOS Serial EEPROM devices organized internally as 8/16/32/64 and 128 pages respectively of 16 bytes each.

All devices support both the Standard (100 kHz) as well as Fast (400 kHz) I2C protocol.

Key Features

  • Supports Standard and Fast I2C Protocol.
  • 1.8 V to 5.5 V Supply Voltage Range.
  • 16-Byte Page Write Buffer.
  • Hardware Write Protection for entire memory.
  • Schmitt Triggers and Noise Suppression Filters 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb CMOS Serial EEPROM DEVICE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CAT24C01_CatalystSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CAT24C02
Manufacturer Catalyst Semiconductor
File Size 396.21 KB
Description Serial EPROM
Datasheet download datasheet CAT24C02 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CAT24C01/02/04/08/16 FEATURES ■ Supports Standard and Fast I2C Protocol ■ 1.8 V to 5.5 V Supply Voltage Range ■ 16-Byte Page Write Buffer ■ Hardware Write Protection for entire memory ■ Schmitt Triggers and Noise Suppression Filters 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb CMOS Serial EEPROM DEVICE DESCRIPTION The CAT24C01/02/04/08/16 are 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb respectively CMOS Serial EEPROM devices organized internally as 8/16/32/64 and 128 pages respectively of 16 bytes each. All devices support both the Standard (100 kHz) as well as Fast (400 kHz) I2C protocol. Data is written by providing a starting address, then loading 1 to 16 contiguous bytes into a Page Write Buffer, and then writing all data to non-volatile memory in one internal write cycle.