CAT28F001 Datasheet | Catalyst Semiconductor

FEATURES s Fast Read Access Time: 70/90/120/150 ns s On-Chip Address and Data Latches s Blocked Architecture Licensed Intel second source s Deep Powerdown Mode s s s s s - One 8 KB Boot Block w/ Lock Out - Top or Bottom Locations - Two 4 KB Parameter Blocks - One 112 KB Main Block Low Power CMOS Operation 12.0V ± 5% Programming and Erase Voltage Automated Program & Erase Algorithms High Speed Programming mercial, Industrial and Automotive Temperature Ranges s s s s s - 0.05 µA ICC Typical - 0.8 µA IPP Typical Hardware Data Protection Electronic Signature 100,000 Program/Erase Cycles and 10 Year Data Retention JEDEC Standard Pinouts: - 32 pin DIP - 32 pin PLCC - 32 pin TSOP Reset/Deep Power Down Mode DESCRIPTION The CAT28F001 is a high speed 128K X 8 bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after sale code updates. The CAT28F001 has a blocked architecture with one 8 KB Boot Block, two 4 KB Parameter Blocks and one 112 KB Main Block. The Boot Block section can be at the top or bottom of the memory map and includes a reprogramming write lock out feature to guarantee data integrity. It is designed to contain secure code which will bring up the system minimally and download code to other locations of CAT28F001. The CAT28F001 is designed with a signature mode which allows the user to identify the IC manufacturer and device type. The CAT28F001 is also designed with on Chip Address Latches, Data Latches, Programming and Erase Algorithms. The CAT28F001 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 10 years. The device is available in JEDEC approved 32-pin plastic DIP, PLCC or TSOP packages. BLOCK DIAGRAM I/O0- I/O7 ADDRESS COUNTER I/O BUFFERS WRITE STATE MACHINE RP WE MAND REGISTER PROGRAM VOLTAGE SWITCH CE, OE LOGIC DATA LATCH PARATOR ERASE VOLTAGE SWITCH STATUS REGISTER SENSE AMP CE...