FEATURES
s High Speed Operation: s Power-Up Inadvertant Write Protection s 1,000,000 Program/Erase Cycles s 100 Year Data Retention s Commercial, Industrial and Automotive – 93C46/56/57/66: 1MHz – 93C86: 3MHz s Low Power CMOS Technology s 1.8 to 6.0 Volt Operation s Selectable x8 or x16 Memory Organization s Self-Timed Write Cycle with Auto-Clear s Hardware and Software Write Protection Temperature Ranges s Sequential Read (except 93C46) s Program Enable (PE) Pin (93C86 only) DESCRIPTION
The devices are designed to endure 1,000,000 program/erase cycles and have a data retention of 100 years. The devices are available in 8-pin DIP, 8-pin SOIC or 8-pin TSSOP packages. PIN CONFIGURATION DIP Package (P) CS SK DI DO 1 2 3 4 8 7 6 5 SOIC Package (J) 1 2 3 4 8 7 6 5 ORG GND DO DI SOIC Package (S) CS SK DI DO 1 2 3 4 8 7 6 5 SOIC Package (K) 1 2 3 4 8 7 6 5 VCC NC (PE*) ORG GND TSSOP Package (U) CS SK DI DO 1 2 3 4 8 7 6 5 VCC NC (PE*) ORG GND VCC NC (PE*) NC (PE*) VCC ORG CS GND SK VCC CS NC...
Catalyst Semiconductor
