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22C10 Datasheet PDF

CatalystSemiconductor 22C10

The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile E2PROM array which allows for easy transfer of data from RAM array to E2PROM (STORE) and from E2PROM to RAM (RECALL).
Part No. 22C10
Datasheet 22C10 Download
Manufacturer CatalystSemiconductor
Description 256-BitNonvolatileCMOSStaticRAM
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22C10 datasheet page 1 preview

FEATURES

s Single 5V Supply s Fast RAM Access Times: s Low CMOS Power Consumption: –200ns –300ns s Infinite E PROM to RAM Recall s CMOS and TTL Compatible I/O s Power Up/Down Protection s 100,000 Program/Erase Cycles (E2PROM) 2 –Active: 40mA Max. –Standby: 30 µA Max. s JEDEC Standard Pinouts: –18-pin DIP –16-pin SOIC s 10 Year Data Retention s Commercial, Industrial and Automotive Temperature Ranges

DESCRIPTION

STORE operations are completed in 10ms max. and RECALL operations typically within 1.5µs. The CAT22C10 features unlimited RAM write operations either through external RAM writes or internal recalls from E2PROM. Internal false store protection circuitry prohibits STORE operations when VCC is less than 3.0V. The CAT22C10 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles (E2PROM) and has a data retention of 10 years. The device is available in JEDEC approved 18-pin plastic DIP and 16pin SOIC packages. PIN...
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