2N1774A Overview
Key Specifications
Max Operating Temp: 150 °C
Min Operating Temp: -65 °C
Description
The CENTRAL SEMICONDUCTOR 2N1772A series devices are reverse blocking triode thyristors designed for use in low power switching and phase control applications requiring blocking voltages up to 400 volts, and RMS load currents up to 7.4 amps. MARKING: FULL PART NUMBER TO-64 CASE Peak Repetitive Off-State Voltage VDRM Peak Repetitive Reverse Voltage VRRM Peak Non-Repetitive Reverse Voltage VRSM Peak Reverse Gate Voltage VRGM RMS On-State Current IT(RMS) Average On-State Current (TC=105°C) IO Peak Forward Gate Current IFGM Peak One Cycle Surge Current (60Hz) I2t Value for Fusing, tp=8.3ms ITSM I2t Critical Rate of Rise of On-State Current di/dt Peak Gate Power Dissipation Average Gate Power Dissipation Operating Junction Temperature Storage Temperature PGM PG(AV) TJ Tstg JC - Mounting Torque (metric) - 2N1772A 100 100 150 2N1774A 2N1776A 200 300 200 300 300 400 10 7.4 4.7 2.0 60 15 60 5.0 0.5 –65 to +125 –65 to +150 3.1 15 17.5 2N1777A UNITS 400 V 400 V 500 V V A A A A A2s A/μs W W °C °C °C/W in-lb kg-cm SYMBOL TEST CONDITIONS MIN TYP IDRM VDRM=100V, TJ=125°C IRRM VRRM=100V, TJ=125°C IDRM VDRM=200V, TJ=125°C IRRM VRRM=200V, TJ=125°C IDRM VDRM=300V, TJ=125°C IRRM VRRM=300V, TJ=125°C IDRM VDRM=400V, TJ=125°C IRRM VRRM=400V, TJ=125°C IGT VD=12V, RL=250Ω IGT VD=12V, RL=250Ω, TJ=-65°C VGT VD=12V, RL=250Ω, TJ=150°C VGD VD=100V, RL=250Ω, TJ=150°C 0.2 VTM IT=15A IH VD=24V, RL=20Ω, TJ=25°C dv/dt - 20 MAX 9.0 9.0 6.0 6.0 4.0 4.0 2.0 2.0 15 30 2.0 1.85 25 UNITS mA mA mA mA mA mA mA mA mA mA V V V mA V/μs R3 (20-March 2019) 2N1772A 2N1774A 2N1776A 2N1777A SI.
