Datasheet4U Logo Datasheet4U.com

CJD117 - PNP Transistor

General Description

The CENTRAL SEMICONDUCTOR CJD112 and CJD117 are complementary silicon power Darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CJD1117-1.5 1A LOW DROPOUT LINEAR REGULATOR Jiangsu Changjiang
CJD1117-1.8 1A LOW DROPOUT LINEAR REGULATOR Jiangsu Changjiang
CJD1117-2.5 1A LOW DROPOUT LINEAR REGULATOR Jiangsu Changjiang
CJD1117-3.3 1A LOW DROPOUT LINEAR REGULATOR Jiangsu Changjiang
CJD1117-5.0 1A LOW DROPOUT LINEAR REGULATOR Jiangsu Changjiang

Other Datasheets by Central Semiconductor

Part Number Description
CJD112 NPN Transistor
CJD13003 NPN SILICON POWER TRANSISTOR
CJD2955 COMPLEMENTARY SILICON POWER TRANSISTOR
CJD3055 COMPLEMENTARY SILICON POWER TRANSISTOR
CJD340 SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CJD112 NPN CJD117 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112 and CJD117 are complementary silicon power Darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC Thermal Resistance ΘJA 100 100 5.0 2.0 4.