CJD117 Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR CJD112 and CJD117 are plementary silicon power Darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC Thermal Resistance ΘJA 100 100 5.0 2.0 4.0 50 20 1.75 -65 to +150 6.25 71.4 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICEO ICEV ICEV ICBO ICBO IEBO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) h FE h FE h FE f T Cob Cob VCE=50V VCE=80V, VBE(off)=1.5V VCE=80V, VBE(off)=1.5V, TC=125°C VCB=80V VCB=100V VEB=5.0V IC=30m A IC=2.0A, IB=8.0m A IC=4.0A, IB=40m A IC=4.0A, IB=40m A VCE=3.0V, IC=2.0A VCE=3.0V, IC=0.5A VCE=3.0V, IC=2.0A VCE=3.0V, IC=4.0A VCE=10V, IC=750m A, f=1.0MHz VCB=10V, IE=0, f=0.1MHz (CJD112) VCB=10V, IE=0, f=0.1MHz (CJD117) 500 1000 200 MAX 20 10 500 10 20 2.0 100 2.0 3.0 4.0 2.8 100 200 UNITS V V V A A m A W W °C °C/W...