Datasheet4U Logo Datasheet4U.com

CMHD3595 - LOW LEAKAGE SILICON DIODE

General Description

The CENTRAL SEMICONDUCTOR CMHD3595 is a silicon diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance applications requiring low leakage.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CMHD21 SMD Common Mode Choke CHILISIN
CMHD457A LOW LEAKAGE SILICON DIODE Central Semiconductor
CMHD459A LOW LEAKAGE SILICON DIODE Central Semiconductor
CMH01 High Efficiency Rectifier Toshiba Semiconductor
CMH02 High Efficiency Rectifier Toshiba Semiconductor

Other Datasheets by Central Semiconductor

Part Number Description
CMHD2003 HIGH VOLTAGE SWITCHING DIODE
CMHD4150 SURFACE MOUNT HIGH SPEED SWITCHING DIODE
CMHD4448 HIGH SPEED SWITCHING DIODE
CMHSH-3 SURFACE MOUNT SCHOTTKY DIODE
CMHSH5-2L SURFACE MOUNT SCHOTTKY RECTIFIER 500mA/ 20 VOLTS LOW FORWARD VOLTAGE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CMHD3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE SOD-123 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD3595 is a silicon diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance applications requiring low leakage. MARKING CODE: C95 MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Peak Working Reverse Voltage Average Forward Current Continuous Forward Current Recurrent Peak Forward Current Peak Forward Surge Current, tp=1.0s Peak Forward Surge Current, tp=1.0μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VRRM VRWM IO IF if IFSM IFSM PD TJ, Tstg ΘJA 150 125 150 225 600 500 4.0 400 -65 to +150 312.