Datasheet Details
| Part number | CMLSH-4 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 816.03 KB |
| Description | SCHOTTKY DIODE |
| Datasheet | CMLSH-4_CentralSemiconductorCorp.pdf |
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Overview: CMLSH-4 SURFACE MOUNT SILICON DUAL, ISOLATED SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i .
| Part number | CMLSH-4 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 816.03 KB |
| Description | SCHOTTKY DIODE |
| Datasheet | CMLSH-4_CentralSemiconductorCorp.pdf |
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|
: The CENTRAL SEMICONDUCTOR CMLSH-4 are two individual, electrically isolated 40 Volt Schottky diodes in a space saving SOT-563 surface mount package.
This device has been designed for applications requiring fast switching speeds and a low forward voltage drop.
MARKING CODES: C4E or 4E MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg ΘJA 40 200 350 750 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=25V 90 500 IR VR=25V, TA=100°C 25 100 BVR IR=100μA 40 50 VF IF=2.0mA 0.29 0.33 VF IF=15mA 0.37 0.42 VF IF=100mA 0.51 0.80 VF IF=200mA 0.65 1.0 CJ VR=1.0V, f=1.0MHz 7.0 trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 UNITS V mA mA mA mW °C °C/W UNITS nA μA V V V V V pF ns R5 (16-February 2016) CMLSH-4 SURFACE MOUNT SILICON DUAL, ISOLATED SCHOTTKY DIODE SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) NC 3) Anode D2 4) Cathode D2 5) NC 6) Cathode D1 MARKING CODES: C4E or 4E w w w.
| Part Number | Description |
|---|---|
| CMLT2907A | SURFACE MOUNT DUAL PNP SILICON TRANSISTORS |
| CMLT3904E | SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS |
| CMLT3906E | SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS |
| CMLT3946E | SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS |