CMPD4448
DESCRIPTION
:
Semiconductor Corp.
SOT-23 CASE MAXIMUM RATINGS (TA=25o C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 µsec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
The CENTRAL SEMICONDUCTOR CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications. Marking code is AAD.
SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ,Tstg ΘJA
75 100 250 250 4000 1000 350 -65 to +150 357
UNITS V V m A m A m A m A m W o C o C/W
ELECTRICAL CHARACTERISTICS (TA=25o C unless otherwise noted) SYMBOL VBR VBR IR VF VF CT trr TEST CONDITIONS MIN IR=5.0µA 75 IR=100µA 100 VR=20V IF=5.0m A 0.62 IF=100m A VR=0, f=1 MHz IR=IF=10m A, RL=100Ω, Rec. to 1.0m A MAX UNITS V V n A V V p F ns
25 0.72 1.0 4.0 4.0
All dimensions...
