CMPD6001S
DESCRIPTION
:
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring a extremely low leakage diode. The following configurations are available:
SOT-23 CASE
CMPD6001 CMPD6001A CMPD6001C CMPD6001S MAXIMUM RATINGS:
SINGLE DUAL, MON ANODE DUAL, MON CATHODE DUAL, IN SERIES (TA=25°C)
MARKING MARKING MARKING MARKING
CODE: CODE: CODE: CODE:
ULO ULA ULC ULS
Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 µsec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ,Tstg ΘJA
75 100 250 250 4000 1000 350 -65 to +150 357
UNITS V V m A m A m A m A m W °C °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL IR VBR VF VF VF CT trr TEST...
