Datasheet Details
| Part number | CZT5338 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 101.59 KB |
| Description | NPN SILICON POWER TRANSISTOR |
| Datasheet | CZT5338_CentralSemiconductorCorp.pdf |
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Overview: CZT5338 NPN SILICON POWER TRANSISTOR Central.
| Part number | CZT5338 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 101.59 KB |
| Description | NPN SILICON POWER TRANSISTOR |
| Datasheet | CZT5338_CentralSemiconductorCorp.pdf |
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: TM Semiconductor Corp.
POWER TM 223 The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high current amplification and switching capability.
SOT-223 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC IB PD TJ,Tstg ΘJA UNITS V V V A A W oC oC/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 100 100 6.0 5.0 1.0 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO IEBO ICEO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE TEST CONDITIONS VCB=100V VBE=6.0V VCE=90V IC=50mA IC=2.0A, IB=200mA IC=5.0A, IB=500mA IC=2.0A, IB=200mA IC=5.0A, IB=500mA VCE=2.0V, IC=500mA VCE=2.0V, IC=2.0A VCE=2.0V, IC=5.0A MIN MAX 10 100 100 0.7 1.2 1.2 1.8 30 30 20 120 UNITS µA µA µA V V V V V 100 312 SYMBOL fT Cob Cib td tr ts tf TEST CONDITIONS VCE=10V, IC=500mA, f=10MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=40V, VBE=3.0V, IC=2.0A, IB1=200mA VCC=40V, VBE=3.0V, IC=2.0A, IB1=200mA VCC=40V, IC=2.0A, IB1=IB2=200mA VCC=40V, IC=2.0A, IB1=IB2=200mA MIN 30 MAX 250 1000 100 100 2.0 200 UNITS MHz pF pF ns ns µs ns All dimensions in inches (mm).
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|---|---|
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