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Central
www.DataSheet4U.com
TM
PROCESS
CPQ150
Triac
Semiconductor Corp.
16 Amp, 600 Volt Triac Chip
PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 150 MILS x 150 MILS 8.6 MILS ± 0.6 MILS 68.9 MILS x 118 MILS 39.4 MILS x 39.4 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 466 PRINCIPAL DEVICE TYPES CQ220-16B Series
BACKSIDE MT2
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CPQ150 Datasheet
