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1N4678 - SILICON ZENER DIODE

General Description

The CENTRAL SEMICONDUCTOR 1N4678 series devices are silicon Zener diodes designed for applications requiring an extremely low operating current (50μA), and low leakage.

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1N4678 THRU 1N4717 SILICON ZENER DIODE LOW LEVEL 500mW, 1.8 THRU 43 VOLT 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4678 series devices are silicon Zener diodes designed for applications requiring an extremely low operating current (50μA), and low leakage. MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TL=75°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 500 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.5V MAX @ IF=100mA (for all types) Type Zener Voltage VZ @ IZT MIN NOM MAX Test Current IZT Maximum Reverse Leakage Current IR @ VR Maximum Voltage Change* ΔVZ V V V μA μA V V Maximum Regulator Current IZM mA 1N4678 1.710 1.8 1.890 50 7.5 1.0 0.