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1N4703C Datasheet Zener Diodes

Manufacturer: Central Semiconductor

Overview: 1N4678C THRU 1N4717C SILICON ZENER DIODE LOW LEVEL 1.8 VOLT THRU 43 VOLT 500mW, 2% TOLERANCE w w w. c e n t r a l s e m i .

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

: The CENTRAL SEMICONDUCTOR 1N4678C series devices are silicon Zener diodes designed for applications requiring an extremely low operating current (50μA), and low leakage.

MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TL=75°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 500 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.5V MAX @ IF=100mA (for all types) Type Zener Voltage VZ @ IZT MIN NOM MAX Test Current IZT Maximum Reverse Leakage Current IR @ VR Maximum Voltage Change* ΔVZ V V V μA μA V V Maximum Regulator Current IZM mA 1N4678C 1.764 1.8 1.836 50 7.5 1.0 0.70 120.0 1N4679C 1.960 2.0 2.040 50 5.0 1.0 0.70 110.0 1N4680C 2.156 2.2 2.244 50 4.0 1.0 0.75 100.0 1N4681C 2.352 2.4 2.448 50 2.0 1.0 0.80 95.0 1N4682C 2.646 2.7 2.754 50 1.0 1.0 0.85 90.0 1N4683C 2.940 3.0 3.060 50 0.8 1.0 0.90 85.0 1N4684C 3.234 3.3 3.366 50 7.5 1.5 0.95 80.0 1N4685C 3.528 3.6 3.672 50 7.5 2.0 0.95 75.0 1N4686C 3.822 3.9 3.978 50 5.0 2.0 0.97 70.0 1N4687C 4.214 4.3 4.386 50 4.0 2.0 0.99 65.0 1N4688C 4.606 4.7 4.794 50 10 3.0 0.99 60.0 1N4689C 4.998 5.1 5.202 50 10 3.0 0.97 55.0 1N4690C 5.488 5.6 5.712 50 10 4.0 0.96 50.0 1N4691C 6.076 6.2 6.324 50 10 5.0 0.95 45.0 1N4692C 6.664 6.8 6.936 50 10 5.1 0.90 35.0 1N4693C 7.350 7.5 7.650 50 10 5.7 0.75 31.8 1N4694C 8.036 8.2 8.364 50 1.0 6.2 0.50 29.0 1N4695C 8.526 8.7 8.874 50 1.0 6.6 0.10 27.6 1N4696C 8.918 9.1 9.282 50 1.0 6.9 0.08 26.2 1N4697C 9.800 10 10.20 50 * ΔVZ=VZ @ 100μA Minus VZ @ 10μA 1.0 7.6 0.10 24.8 R4 (31-July 2013) 1N4678C THRU 1N4717C SILICON ZENER DIODE LOW LEVEL 1.8 VOLT THRU 43 VOLT 500mW, 2% TOLERANCE ELECTRICAL CHARAC

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