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1N5518B - SILICON ZENER DIODES

General Description

The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications.

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Other Datasheets by Central Semiconductor

Part Number Description
1N5519B SILICON ZENER DIODES
1N5520B SILICON ZENER DIODES
1N5521B SILICON ZENER DIODES
1N5522B SILICON ZENER DIODES
1N5523B SILICON ZENER DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N5518B THRU 1N5546B SILICON ZENER DIODES 400mW, 3.3 THRU 33 VOLT ±5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications. MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 400 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types) Type Zener Voltage VZ @ IZT MIN NOM MAX V V V Test Current IZT mA Maximum Zener Impedance (Note 1) ZZT @ IZT Ω Maximum Reverse Current IR @ VR μA V 1N5518B 3.135 3.3 3.465 20 26 5.0 1.0 1N5519B 3.420 3.6 3.780 20 24 3.0 1.0 1N5520B 3.705 3.9 4.