| Part number | 1N5518B |
|---|---|
| Download | 1N5518B Datasheet (PDF) |
| File Size | 130.14 KB |
| Manufacturer | Central Semiconductor |
| Description | SILICON ZENER DIODES |
|
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| Manufacturer | Part Number | Description |
|---|---|---|
Compensated Deuices Incorporated |
1N5518B | LOW REVERSE LEAKAGE CHARACTERISTICS |
Microsemi |
1N5518B | 500mW Zener Diodes |
|
Microsemi |
1N5518B-1 | 500mW Zener Diodes |
VPT Components |
1N5518B-1 | Low Noise Zener Diode |
|
Compensated Deuices Incorporated |
1N5518B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications. FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 400 -65 to +200 UNITS mW °C.
