1N5520B Datasheet | Central Semiconductor

1N5518B THRU 1N5546B SILICON ZENER DIODES 400m W, 3.3 THRU 33 VOLT ±5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications. MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 400 -65 to +200 UNITS m W °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200m A (for all types) Type Zener Voltage VZ @ IZT MIN NOM MAX Test Current IZT m A Maximum Zener Impedance (Note 1) ZZT @ IZT Ω Maximum Reverse Current IR @ VR μA 1N5518B 3.135 3.3 1N5519B 3.420 3.6 1N5520B 3.705 3.9 1N5521B 4.085 4.3 1N5522B 4.465 4.7 1N5523B 4.845 5.1 5.355...