Datasheet Summary
1N5518B THRU 1N5546B
SILICON ZENER DIODES 400mW, 3.3 THRU 33 VOLT
±5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS: (TA=25°C) Power Dissipation
Operating and Storage Junction Temperature
SYMBOL PD
TJ, Tstg
400 -65 to +200
UNITS mW °C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types)
Type
Zener Voltage VZ @ IZT
MIN NOM MAX
Test Current
IZT mA
Maximum Zener
Impedance (Note 1)
ZZT @ IZT
Ω
Maximum Reverse Current
IR @ VR
μA
1N5518B 3.135...
