This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 1N5538B |
|---|---|
| Datasheet | 1N5538B 1N5518B Datasheet (PDF) |
| File Size | 130.14 KB |
| Manufacturer | Central Semiconductor |
| Description | SILICON ZENER DIODES |
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The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications. FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 400 -65 to +200 UNITS mW °C.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1N5538B | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Deuices Incorporated |
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1N5538B | 500mW Zener Diodes | Microsemi |
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1N5538B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Deuices Incorporated |
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1N5538B-1 | Low Noise Zener Diode | MA-COM |
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1N5538B-1 | 500mW Zener Diodes | Microsemi |
See all Central Semiconductor datasheets
| Part Number | Description |
|---|---|
| 1N5530B | SILICON ZENER DIODES |
| 1N5531B | SILICON ZENER DIODES |
| 1N5532B | SILICON ZENER DIODES |
| 1N5533B | SILICON ZENER DIODES |
| 1N5534B | SILICON ZENER DIODES |
| 1N5535B | SILICON ZENER DIODES |
| 1N5536B | SILICON ZENER DIODES |
| 1N5537B | SILICON ZENER DIODES |
| 1N5539B | SILICON ZENER DIODES |
| 1N5518B | SILICON ZENER DIODES |
