Datasheet Details
| Part number | 2N1304 |
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| Manufacturer | Central Semiconductor |
| File Size | 426.14 KB |
| Description | NPN TRANSISTORS |
| Datasheet | 2N1304 2N1302 Datasheet (PDF) |
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Overview: 2N1302 2N1304 2N1306 2N1308 GERMANIUM NPN TRANSISTORS w w w. c e n t r a l s e m i .
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N1304 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 426.14 KB |
| Description | NPN TRANSISTORS |
| Datasheet | 2N1304 2N1302 Datasheet (PDF) |
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: The CENTRAL SEMICONDUCTOR 2N1302, 2N1304, 2N1306, and 2N1308 are germanium NPN transistors designed for puter and switching applications.
MARKING: FULL PART NUMBER TO-5 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating Junction Temperature Storage Temperature SYMBOL VCBO VEBO IC PD TJ Tstg ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=25V IEBO VEB=25V BVCBO IC=100μA BVEBO IE=100μA VCE(SAT) IC=10mA, IB=0.5mA (2N1302) VCE(SAT) IC=10mA, IB=0.25mA (2N1304) VCE(SAT) IC=10mA, IB=0.17mA (2N1306) VCE(SAT) IC=10mA, IB=0.13mA (2N1308) VBE(SAT) IC=10mA, IB=0.5mA (2N1302) VBE(SAT) IC=10mA, IB=0.5mA (2N1304, 06, 08) hFE VCE=1.0V, IC=10mA (2N1302) hFE VCE=1.0V, IC=10mA (2N1304) hFE VCE=1.0V, IC=10mA (2N1306) hFE VCE=1.0V, IC=10mA (2N1308) hFE VCE=0.35V, IC=200mA (2N1302) hFE VCE=0.35V, IC=200mA (2N1304) hFE VCE=0.35V, IC=200mA (2N1306, 08) hib VCB=5.0V, IE=1.0mA, f=1.0kHz hrb VCB=5.0V, IE=1.0mA, f=1.0kHz hob VCB=5.0V, IE=1.0mA, f=1.0kHz hfe VCB=5.0V, IE=1.0mA, f=1.0kHz NF VCB=5.0V, IE=1.0mA, f=1.0kHz Cob VCB=5.0V, f=1.0MHz Cib VEB=5.0V, f=1.0MHz MIN 25 25 0.15 0.15 20 40 60 80 10 15 20 25 25 300 150 -65 to +85 -65 to +100 TYP MAX 6.0 6.0 0.20 0.20 0.20 0.20 0.40 0.35 200 300 28 5.0 0.34 140 3.0 20 13 UNITS V V mA mW °C °C UNITS μA μA V V V V V V V V Ω x10-4 μS dB pF pF R1 (5-May 2014) 2N1302 2N1304 2N1306 2N1308 GERMANIUM NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) SYMBOL TEST CONDITIONS MIN td tr IC=10mA, IB1=1.3mA, IB2=0.7mA ts VBE(OFF)=0.8V, RL=1.0kΩ tf fhfb VCB=5.0V, IE=1.0mA (2N1302) 3.0 fhfb VCB=5.0V, IE=1.0mA (2N1304) 5.0 fhfb VCB=5.0V, IE=1.0mA (2N1306) 10 fhfb VCB=5.0V, IE=1.0mA (2N1308) 15 TYP 0.07 0.20 0.70 0.40 MAX TO-5 CASE - MECHANICAL OUTLINE UNITS μs μs μs μs MHz MHz MHz MH
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N1304 | NPN Transistor | GPD |
| Part Number | Description |
|---|---|
| 2N1304 | NPN Transistor |
| 2N1302 | (2N1302/4/6/8) NPN Germantum Transistor |
| 2N1303 | PNP Germantum Transistor |
| 2N1305 | PNP Germantum Transistor |
| 2N1306 | (2N1302/4/6/8) NPN Germantum Transistor |
| 2N1307 | PNP Germantum Transistor |
| 2N1308 | (2N1302/4/6/8) NPN Germantum Transistor |
| 2N1309 | PNP Germantum Transistor |
| 2N1373 | PNP TRANSISTOR |
| 2N1131 | SILICON PNP TRANSISTOR |