2N2060M
2N2060M is SILICON DUAL NPN TRANSISTOR manufactured by Central Semiconductor.
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2N2060M is a silicon dual NPN transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCER
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
Power Dissipation (One Die)
Power Dissipation (Both Dice)
Power Dissipation (One Die, TC=25°C)
Power Dissipation (Both Dice, TC=25°C)
Operating and Storage Junction Temperature
TJ, Tstg
100 80 60 7.0 500 500 600 1.5 3.0 -65 to +200
UNITS V V V V m A m W m W W W °C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=80V
IEBO
VEB=5.0V
BVCBO
IC=100μA...
