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2N2218 - SILICON NPN TRANSISTOR

General Description

The CENTRAL SEMICONDUCTOR 2N2218 and 2N2218A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications.

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2N2218 2N2218A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2218 and 2N2218A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg 2N2218 60 2N2218A 75 30 40 5.0 6.0 800 800 3.0 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=50V ICBO VCB=60V ICEV VCE=60V, VEB=3.