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2N2219 Datasheet PDF

Central Semiconductor 2N2219

The CENTRAL SEMICONDUCTOR 2N2219 and 2N2219A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications.
Part No. 2N2219
Datasheet 2N2219 Download
Manufacturer
Central Semiconductor
Description SILICON NPN TRANSISTORS
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2N2219 datasheet page 1 preview

DESCRIPTION

: MARKING: FULL PART NUMBER TO-39 CASE

MAXIMUM RATINGS

: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg 2N2219 60 2N2219A 75 30 40 5.0 6.0 800 800 3.0 -65 to +200

ELECTRICAL CHARACTERISTICS

: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=50V ICBO VCB=60V ICEV VCE=60V, VEB=3.0V IEBO VEB=3.0V BVCBO IC=10μA BVCEO IC=10mA BVEBO IE=10μA VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=100
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