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2N2646 - SILICON PN UNIJUNCTION TRANSISTORS

General Description

The CENTRAL SEMICONDUCTOR 2N2646 and 2N2647 devices are silicon PN Unijunction Transistors designed for general purpose industrial applications.

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2N2646 2N2647 SILICON PN UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2646 and 2N2647 devices are silicon PN Unijunction Transistors designed for general purpose industrial applications. MARKING: FULL PART NUMBER TO-18 (UJT) CASE MAXIMUM RATINGS: (TA=25°C) Emitter Reverse Voltage SYMBOL VB2E Interbase Voltage VB2B1 RMS Emitter Current Ie Peak Emitter Current (Duty Cycle ≤1%, PRR≤10pps) ie RMS Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg 30 35 50 2.0 300 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2646 SYMBOL TEST CONDITIONS MIN MAX VB2B1=10V 0.56 0.75 RBB VB2B1=3.0V 4.7 9.1 IEB2O VB2E=30V - 12 IV VB2B1=20V, RB2=100Ω 4.0 - IP VB2B1=25V - 5.