Datasheet Details
| Part number | 2N3011 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 338.88 KB |
| Description | SILICON NPN TRANSISTOR |
| Datasheet | 2N3011-CentralSemiconductor.pdf |
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Overview: 2N3011 SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i .
| Part number | 2N3011 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 338.88 KB |
| Description | SILICON NPN TRANSISTOR |
| Datasheet | 2N3011-CentralSemiconductor.pdf |
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: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications.
MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (tp=10μs) Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC ICM PD PD TJ, Tstg ΘJA ΘJC 30 30 12 5.0 200 500 360 1.2 -65 to +200 486 146 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCE=20V ICES VCE=20V, TA=85°C BVCBO IC=10μA 30 BVCES IC=10μA 30 BVCEO IC=10mA 12 BVEBO IE=100μA 5.0 VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=10mA, IB=1.0mA, TA=85°C VCE(SAT) IC=30mA, IB=3.0mA V
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3011 | Bipolar NPN Device | Seme LAB |
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2N3011 | SWITCHING TRANSISTOR | Motorola |
| Part Number | Description |
|---|---|
| 2N3012 | Small Signal Transistors |
| 2N3019 | NPN Transistor |
| 2N3020 | NPN Transistor |
| 2N3055 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N3073 | Small Signal Transistors |
| 2N3115 | Small Signal Transistors |
| 2N3116 | Small Signal Transistors |
| 2N3117 | Small Signal Transistors |
| 2N3121 | Small Signal Transistors |
| 2N3134 | Small Signal Transistors |