The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N3391A 2N3392 2N3393
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3391A series are silicon NPN transistors designed for general purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA
25 25 5.0 500 625 -65 to +150 200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=18V
IEBO
VEB=5.0V
BVCBO
IC=10μA
25
BVCEO
IC=10mA
25
BVEBO
IE=10μA
5.0
Cob
VCB=10V, f=1.0MHz
2.0
NF
VCE=4.5V, IC=100μA, RG=500Ω,
BW=15.